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hexfet ? is a registered trademark of international rectifier. applicable directfet outline and substrate outline directfet power mosfet ?
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? $ ? '()* ? + , +, + , ? ! + $ sb sc m2 m4 l4 l6 l8 directfet isometric description the auirf7732s2 combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet ? pack- aging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% sma ller than an so-8 and only 0.7mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed reg arding the manufacturing methods and processes. the directfet ? package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet power mosfet is designed for applications where efficiency and power density are of value. the advanced directfet ? packaging platform coupled with the latest silicon technology allows the auirf7732s2 to offer substantial system level savings and performance improvement specifically in high frequency dc-dc, motor drive and other heavy load applications on ice, hev and ev platforms. this mosfet utilizes the latest processing techniques to achieve low on-resistance and low qg per silicon area . add itional features of this mosfet are 175c operating junction temperature and high repetitive peak current capability. these features co mbine to make this mosfet a highly efficient, robust and reliable device for high current automotive applications. dd g s s
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absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is no t implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissi pation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss 40v r ds(on) typ. 5.5m max. 6.95m i d (silicon limited) 55a q g 30nc ordering information form quantity auirf7732s2 directfet2 small -can tape and reel 4800 AUIRF7732S2TR auirf7732s2 directfet2 small -can tape and reel option 1 1000 AUIRF7732S2TR1 base part number package type standard pack complete part number parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range 41 w 2.5 see fig. 18a,18b,16,17 100 45 mj 260 c -55 to + 175 max. 55 39 220 v a 20 40 14
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d s g static characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c r ds(on) static drain-to-source on-resistance ??? 5.5 6.95 m .0 .0 .1 0. a ??? ??? 250 i gs s gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 dynamic characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units q g total gate charge ??? 30 45 q gs1 pre-vth gate-to-source charge ??? 5.1 ??? q gs2 post-vth gate-to-source charge ??? 2.8 ??? nc q gd gate-to-drain ("miller") charge ??? 9.7 ??? q godr gate charge overdrive ??? 12 ??? q sw switch charge (q gs2 + q gd ) ??? 12.5 ??? q oss output charge ??? 16 ??? nc t d(on) turn-on delay time ??? 9.6 ??? t r rise time ???25??? ns t d(off) turn-off delay time ???24??? t f fall time ???22??? c iss input capacitance ??? 1700 ??? c oss output capacitance ??? 405 ??? c rs s reverse transfer capacitance ??? 200 ??? pf c oss output capacitance ??? 1460 ??? c oss output capacitance ??? 360 ??? c oss eff. effective output capacitance ??? 540 ??? v gs = 0v v ds = 25v v gs = 20v v gs = 0v, v ds = 1.0v, f=1.0mhz v gs = 0v, v ds = 32v, f=1.0mhz see fig.11 conditions v ds = 20v v gs = 10v v ds = 16v, v gs = 0v v dd = 20v, v gs = 4.5v i d = 33a na conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 33a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c v gs = -20v v ds = 10v, i d = 33a r g = 6.8 1.0 0 0 0 a i d = 33a diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 33 50 ns q rr reverse recovery charge ??? 22 33 nc p-n junction diode. mosfet symbol conditions showing the integral reverse i f = 33a, v dd = 20v di/dt = 100a/ s i s = 33a, v gs = 0v ??? ??? 220 ??? ??? 55
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surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) notes through are on page 10 thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 60 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jcan junction-to-can ??? 3.7 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 0.27
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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c v ds = 25v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 33a v gs = 10v 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 14 16 18 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 33a t j = 125c t j = 25c 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 2 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c vgs = 10v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 60 s pulse width tj = 25c 3.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 60 s pulse width tj = 175c 3.5v
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fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs. drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) tj = -40c tj = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v v ds = 8.0v i d = 33a 0 20406080100 i d ,drain-to-source current (a) 0 20 40 60 80 100 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 5.0v 380 s pulse width 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a )
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fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.4a 17a bottom 33a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc
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fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 15) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l s 20k
1 0.1 %
+ - 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 30 35 40 45 50 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 33a
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d d d d g=gate d=drain s=source g s s
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please see an-1035 for directfet assembly details and stencil and substrate design recommendations
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note: for the most current drawing please refer to ir website at http://www .irf.com/package/
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please see an-1035 for directfet assembly details and stencil and substrate design recommendations "au" = gate and automotive marking part number logo batch number date code line above the last character of the date code indicates "lead-free" code a b c d e f g h j k l m r p 0.016 0.029 0.003 0.007 0.041 0.088 0.112 0.032 0.018 0.024 max 0.191 0.156 0.38 0.68 0.02 0.08 0.95 2.15 2.75 0.78 0.35 0.58 min 4.75 3.70 0.42 0.74 0.08 0.17 1.05 2.25 2.85 0.82 0.45 0.62 max 4.85 3.95 0.015 0.027 0.003 0.001 0.085 0.037 0.108 0.031 0.023 0.014 min 0.146 0.187 metric imperial dimensions 0.75 0.80 0.63 0.67 0.026 0.025 0.031 0.030 dimensions are shown in millimeters (inches)
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click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.083mh, r g = 50 , i as = 33a,vgs = 20v. pulse width 400 s; duty cycle 2%.
used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c.
? tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as AUIRF7732S2TR). for 1000 parts on 7" reel, order AUIRF7732S2TR1 b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 d h g
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6 7 , 0 +8 &, 9 http://www.irf.com 66 "# "7'/' : : - 666 - qualification information ? small-can msl1, 260c rohs compliant yes esd machine model class m2 (+/- 200v) ??? aec-q101-002 charged device model moisture sensitivity level aec-q101-005 class h1b (+/- 1000v) ??? qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. human body model n/a aec-q101-001
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important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any tim e and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive indus try and / or customer specific requirements with regards to product discontinuance and process change notification. all products ar e sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warr anty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide ad- equate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of thi rd parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir produc t could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleg es that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in c onnection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact ir?s technical assistance center http://www .irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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